Information om | Engelska ordet EPITAXY

Exempel på hur man kan använda EPITAXY i en mening

• Selective area epitaxy, local growth of epitaxial layer through a patterned dielectric mask deposited on a semiconductor substrate.
• With his life-long collaborator Immanuel Estermann, he demonstrated of the wave nature of atoms and molecules; measurement of atomic magnetic moments; discovery of the proton's magnetic moment; and development of the molecular beam method which is utilized for the technique of molecular beam epitaxy.
• The term epitaxy comes from the Greek roots epi (ἐπί), meaning "above", and taxis (τάξις), meaning "an ordered manner".
• Heterojunction manufacturing generally requires the use of molecular beam epitaxy (MBE) or chemical vapor deposition (CVD) technologies in order to precisely control the deposition thickness and create a cleanly lattice-matched abrupt interface.
• On an industrial scale the film deposition is done by magnetron sputter deposition; on a laboratory scale molecular beam epitaxy, pulsed laser deposition and electron beam physical vapor deposition are also utilized.
• TMA is the preferred precursor for metalorganic vapour phase epitaxy (MOVPE) of aluminium-containing compound semiconductors, such as AlAs, AlN, AlP, AlSb, AlGaAs, AlInGaAs, AlInGaP, AlGaN, AlInGaN, AlInGaNP, etc.
• An epitaxial wafer (also called epi wafer, epi-wafer, or epiwafer) is a wafer of semiconducting material made by epitaxial growth (epitaxy) for use in photonics, microelectronics, spintronics, or photovoltaics.
• Single crystal material in thin-film form can be grown by epitaxy from the liquid-phase (LPE), vapour-phase (VPE), by molecular beam epitaxy (MBE), and by metalorganic chemical vapour deposition (MO-CVD).
• It crystallizes in the rock salt structure as its most stable phase, its zinc blende and wurtzite structures can be prepared by molecular beam epitaxy.
• More recent advances include deposition of strained silicon using metalorganic vapor-phase epitaxy (MOVPE) with metalorganics as starting sources, e.
• Metalorganic vapour-phase epitaxy (MOVPE), also known as organometallic vapour-phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a chemical vapour deposition method used to produce single- or polycrystalline thin films.
• Common techniques are physical vapor deposition (which includes evaporative deposition and ion beam assisted deposition), chemical vapor deposition, ion beam deposition, molecular beam epitaxy, sputter deposition, and sol-gel deposition.
• Because of its thermal lability, germane is used in the semiconductor industry for the epitaxial growth of germanium by MOVPE or chemical beam epitaxy.
• Liquid phase epitaxy (LPE) is another key method, especially for creating thin YIG films with excellent uniformity.
• Thin film piezoelectric materials can be manufactured utilizing sputtering, CVD (chemical vapour deposition), ALD (atomic layer epitaxy) etc.
• MZT is less amenable than MCT to fabrication of complex heterostructures by molecular beam epitaxy.
• Atomic layer epitaxy (ALE), more generally known as atomic layer deposition (ALD), is a specialized form of thin film growth (epitaxy) that typically deposit alternating monolayers of two elements onto a substrate.
• This was the first material used to grow epitaxial cadmium telluride and mercury cadmium telluride using metalorganic vapour phase epitaxy.
• HgTe can also be grown epitaxially, for example, by sputtering or by metalorganic vapour phase epitaxy.
• Hydride vapour-phase epitaxy (HVPE) is an epitaxial growth technique often employed to produce semiconductors such as GaN, GaAs, InP and their related compounds, in which hydrogen chloride is reacted at elevated temperature with the group-III metals to produce gaseous metal chlorides, which then react with ammonia to produce the group-III nitrides.

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