Information om | Engelska ordet MOSFET

Exempel på hur man kan använda MOSFET i en mening

• In electronics, the metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, MOS FET, or MOS transistor) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon.
• This differs from the conventional bulk metal oxide field effect transistor (MOSFET), where the semiconductor material typically is the substrate, such as a silicon wafer.
• The silicon-gate technology (SGT) is one of the most influential technologies to have fueled the progress of microelectronics since the MOSFET.
• Their role in field-effect transistors (FETs) is a bit more complex: for example, a MOSFET has p-type and n-type regions.
• The MESFET, similarly to JFET, differs from the common insulated gate FET or MOSFET because there is no insulator under the gate over the active switching region.
• The basis for the HEMT was the GaAs (gallium arsenide) MOSFET (metal–oxide–semiconductor field-effect transistor), which Mimura had been researching as an alternative to the standard silicon (Si) MOSFET since 1977.
• For variable fan control, potentiometers could be used along with a transistor such as a MOSFET whose output voltage is controlled by the potentiometer.
• For power semiconductor devices (such as BJT, MOSFET, thyristor or IGBT), the safe operating area (SOA) is defined as the voltage and current conditions over which the device can be expected to operate without self-damage.
• In modern systems, the conversion is performed with semiconductor switching devices such as diodes, thyristors, and power transistors such as the power MOSFET and IGBT.
• The MOSFET invented at Bell Labs between 1955 and 1960, had both pMOS and nMOS devices with a 20 μm process.
• The MOSFET was invented at Bell Labs between 1955 and 1960, after Frosch and Derick discovered and used surface passivation by silicon dioxide to create the first planar transistors, the first in which drain and source were adjacent at the same surface.
• Weimer, also of RCA, implemented Wallmark's ideas and developed the thin-film transistor (TFT) in 1962, a type of MOSFET distinct from the standard bulk MOSFET.
• In MOSFET transistors, RDF in the channel region can alter the transistor's properties, especially threshold voltage.
• A double-gate MOSFET was later proposed by Toshihiro Sekigawa of the Electrotechnical Laboratory (ETL) in a 1980 patent describing the planar XMOS transistor.
• With the area of the MOSFETs halving every 18-24 months (Moore's law) the distance between the two terminals of the MOSFET switch called the channel length is becoming smaller and smaller.
• The insulated-gate bipolar transistor (IGBT), which combines elements of both the power MOSFET and the bipolar junction transistor (BJT), was developed by Jayant Baliga at General Electric between 1977 and 1979.
• The original two types of MOSFET logic gates, PMOS and NMOS, were developed by Frosch and Derick in 1957 at Bell Labs.
• When a MOSFET is used for the lower switch, additional losses may occur during the time between the turn-off of the high-side switch and the turn-on of the low-side switch, when the body diode of the low-side MOSFET conducts the output current.
• p-n junction diode, Zener diode, tunnel diode, BJT, JFET, MOS capacitor, MOSFET, LED, p-I-n and avalanche photo diode, LASERs.
• The voltage in this high impedance state would be floating (undefined) because the MOSFET is not conducting, which is why nMOS open drain outputs require a pull-up resistor connected to a positive voltage rail for producing a high output voltage.

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