Information om | Engelska ordet MOVPE

Exempel på hur man kan använda MOVPE i en mening

• TMA is the preferred precursor for metalorganic vapour phase epitaxy (MOVPE) of aluminium-containing compound semiconductors, such as AlAs, AlN, AlP, AlSb, AlGaAs, AlInGaAs, AlInGaP, AlGaN, AlInGaN, AlInGaNP, etc.
• More recent advances include deposition of strained silicon using metalorganic vapor-phase epitaxy (MOVPE) with metalorganics as starting sources, e.
• Metalorganic vapour-phase epitaxy (MOVPE), also known as organometallic vapour-phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a chemical vapour deposition method used to produce single- or polycrystalline thin films.
• Because of its thermal lability, germane is used in the semiconductor industry for the epitaxial growth of germanium by MOVPE or chemical beam epitaxy.
• The environment, health and safety aspects of aluminium indium gallium phosphide sources (such as trimethylgallium, trimethylindium and phosphine) and industrial hygiene monitoring studies of standard MOVPE sources have been reported in a review.
• The environment, health and safety aspects of aluminium indium arsenide sources (such as trimethylindium and arsine) and industrial hygiene monitoring studies of standard MOVPE sources have been reported recently in a review.
• Isobutylgermane, a volatile colorless liquid, is used in MOVPE (Metalorganic Vapor Phase Epitaxy) in the deposition of Ge semiconductor films.
• It is a colourless, volatile liquid that is used in MOVPE (Metalorganic Vapor Phase Epitaxy) as an alternative to germane.
• These materials are prepared by metalorganic vapour phase epitaxy (MOVPE) and TMI is the preferred source for the indium component.
• Dapkus and Dupuis had, by then, pioneered the metalorganic vapour phase epitaxy MOVPE (also known as OMCVD, OMVPE, and MOCVD) technique for fabricating semiconductor layers.
• It is the preferred source of indium for metalorganic vapour phase epitaxy (MOVPE) of indium-containing compound semiconductors, such as InP, InAs, AlInGaNP, etc.
• The inert carrier gas and the metalorganic vapor is then introduced into the MOVPE (or MOCVD) reactor chamber during the production of high brightness LEDs.
• Also called TEGa, it is a metalorganic source of gallium for metalorganic vapour phase epitaxy (MOVPE) of compound semiconductors.
• GaAsSb films have been grown by molecular beam epitaxy (MBE), metalorganic vapor phase epitaxy (MOVPE) and liquid phase epitaxy (LPE) on gallium arsenide, gallium antimonide and indium phosphide substrates.
• InAsSb films have been grown by molecular beam epitaxy (MBE), metalorganic vapor phase epitaxy (MOVPE) and liquid phase epitaxy (LPE) on gallium arsenide and gallium antimonide substrates.

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